Method of removing silicon nitride film formed on a surface of a material with a process gas containing a higher-order fluorocarbon in combination with a lower-order fluorocarbon
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United States of America Patent
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May 27, 2003
Grant Date -
Oct 24, 2002
app pub date -
Apr 18, 2002
filing date -
Apr 23, 2001
priority date (Note) -
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Abstract
For selectively removing a silicon nitride film formed on a bottom of a contact hole or the like in a semiconductor device, plasma etching is performed using a process gas supplied therefor which is comprised of a first fluorine compound including a carbon atom-carbon atom bond [for example, octafluorocyclobutane (C.sub.4 F.sub.8), hexafluorobutadiene (C.sub.4 F.sub.6), octafluorocyclopentene (C.sub.5 F.sub.8)], and a second fluorine compound including at least one hydrogen atom and a single carbon atom in one molecule (for example, fluoromethane (CH.sub.3 F), difluoromethane (CH.sub.2 F.sub.2), trifluoromethane (CHF.sub.3)]. According to this method, the silicon nitride film on the bottom can be selectively removed without removing a silicon nitride film formed on a side wall of the contact hole and the like.
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