Solid state imaging apparatus and method for fabricating the same
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United States of America Patent
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Oct 14, 2008
Grant Date -
Jul 27, 2006
app pub date -
Jan 20, 2006
filing date -
Jan 27, 2005
priority date (Note) -
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Abstract
A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.
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