Nonvolatile semiconductor memory and manufacturing method thereof
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United States of America Patent
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Aug 19, 2008
Grant Date -
Jun 7, 2007
app pub date -
Feb 7, 2007
filing date -
Jun 26, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A nonvolatile semiconductor memory includes a trench isolation provided in a semiconductor substrate and an interlayer insulator provided on the semiconductor substrate. The trench isolation defines an active area extending in a first direction at the semiconductor substrate. The interlayer insulator has a wiring trench extending in a second direction intersecting the first direction. A first conductive material layer is provided at the cross-point of the active area and the wiring trench so that it is insulated from the active area. A second conductive material layer is provided in the wiring trench so that it is insulated from the first conductive material layer. A metal layer is provided in the wiring trench so that it is electrically in contact the second conductive material layer.
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