Methods of fabricating ferroelectric devices

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United States of America Patent

PATENT NO 7585683
SERIAL NO

11778880

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Abstract

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A method of fabricating a ferroelectric device includes forming a ferroelectric layer on a substrate in a reaction chamber. An inactive gas is provided into the reaction chamber while unloading the substrate therefrom to thereby substantially inhibit formation of an impurity layer on the ferroelectric layer.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bae, Byoung-Jae Gyeonggi-do , KR 53 1124
Heo, Jang-Eun Seoul , KR 14 157
Im, Dong-Hyun Gyeonggi-do , KR 46 444
Kim, Ik-Soo Gyeonggi-do , KR 50 633
Lee, Choong-Man Seoul , KR 16 361
Yoo, Dong-Chul Gyeonggi-do , KR 28 807

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