Semiconductor device using low-K material as interlayer insulating film and its manufacture method

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United States of America Patent

PATENT NO 7256118
APP PUB NO 20050250309A1
SERIAL NO

11179550

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A semiconductor element is formed over a surface of a semiconductor substrate. A first insulating film is formed over the surface of the semiconductor substrate, the first insulating film covering the semiconductor element. A second insulating film is formed over the first insulating film, the second insulating film having a dielectric constant lower than that of the first insulating film. A first wiring pattern is formed over the second insulating film. A conductive connection member buried in the second and first insulating films electrically interconnects the first wiring pattern and semiconductor element.

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Patent Owner(s)

  • FUJITSU LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fukuyama, Shun-ichi Kawasaki, JP 29 412
Owada, Tamotsu Kawasaki, JP 40 311
Sugimoto, Ken Kawasaki, JP 51 753

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