Structure of trench capacitor and method for manufacturing the same
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United States of America Patent
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Apr 24, 2012
Grant Date -
Feb 25, 2010
app pub date -
Aug 24, 2008
filing date -
Aug 24, 2008
priority date (Note) -
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Abstract
A structure of trench capacitor and method for manufacturing the trench capacitor is provided. The collar oxide layer of the trench capacitor is formed by a thermal oxidation process. Moreover, a protective layer such as silicon nitride covers the collar oxide layer. A failure analysis of the collar oxide layer can be operated by detecting the protective layer. If the protective layer is detected, the collar oxide layer is therefore at a suitable thickness. Furthermore, a mask layer rather than the collar oxide layer is used as a mask during the trench formation.
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