Film bulk acoustic resonator and method of forming the same
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United States of America Patent
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-
Jan 31, 2006
Grant Date -
Oct 16, 2003
app pub date -
Dec 17, 2002
filing date -
Apr 11, 2002
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A film bulk acoustic resonator (FBAR) includes an insulation layer on a substrate to prevent a signal from being transmitted to a substrate. The FBAR includes a portion of a membrane layer corresponding to an activation area to adjust a resonance frequency band and improve a transmission gain of the resonance frequency band, the portion of the membrane layer being partially etched to have a thickness less than the other portion of the membrane layer. A method of forming the FBAR includes forming an sacrificing layer made of polysilicon, forming an air gap using a dry etching process, and forming a via hole. The method prevents structural problems occurred in a conventional air gap forming process and provides locations and the number of the via holes to be controlled.
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