Method for fabricating a semiconductor device having contacts self-aligned with a gate electrode thereof
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United States of America Patent
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Jun 3, 2003
Grant Date -
N/A
app pub date -
Feb 29, 2000
filing date -
Mar 25, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A gate electrode is made up of a lower electrode of polysilicon and an upper electrode including a low-resistance film. A nitride sidewall is formed to cover at least the side faces of an insulator cap and the upper electrode. A pad oxide film is formed to cover at least part of the side faces of the lower electrode and part of the upper surface of a semiconductor substrate. Since a second nitride sidewall is formed to cover the first nitride sidewall and the pad oxide film, a self-aligned contact hole can be formed by etching. As a result, a semiconductor device with a highly reliable self-aligned contact can be obtained.
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