Source/drain contact structure
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United States of America Patent
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Dec 20, 2022
Grant Date -
Nov 25, 2021
app pub date -
Nov 9, 2020
filing date -
May 22, 2020
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor device according to the present disclosure includes a first interconnect structure, a first transistor over the first interconnect structure, a second transistor over the first transistor, and a second interconnect structure over the second transistor. The first transistor includes first nanostructures and a first source region adjoining the first nanostructures. The second transistor includes second nanostructures and a second source region adjoining the second nanostructures. The first source region is coupled to a first power rail in the first interconnect structure, and the second source region is coupled to a second power rail in the second interconnect structure.
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