Semiconductor device and method

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11823958
APP PUB NO 20210351084A1
SERIAL NO

17379469

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Abstract

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In an embodiment, a device includes: a first fin extending from a substrate; a gate stack disposed on the first fin; a source/drain region disposed in the first fin; a contact etch stop layer (CESL) disposed over the source/drain region; a gate spacer extending along a side of the gate stack; and a dielectric plug disposed between the CESL and the gate spacer, where the dielectric plug, the CESL, the gate spacer, and the source/drain region collectively define a void physically separating the gate stack from the source/drain region.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Ryan Chia-Jen Hsinchu, TW 153 1488
Huang, Chen-Huang Hsinchu, TW 18 10
Sie, Ming-Jhe Taipei, TW 15 7
Wang, Shiang-Bau Pingzchen, TW 82 954
Yin, Li-Wei Hsinchu, TW 18 38

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