Semiconductor device and fabrication method thereof

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United States of America Patent

PATENT NO 11830782
APP PUB NO 20210265230A1
SERIAL NO

17317785

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Abstract

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In a semiconductor device, it is preferable to suppress a variation in characteristics of a temperature sensor. The semiconductor device is provided that includes a semiconductor substrate having a first conductivity type drift region, a transistor section provided in the semiconductor substrate, a diode section provided in the semiconductor substrate, a second conductivity type well region exposed at an upper surface of the semiconductor substrate, a temperature sensing unit that is adjacent to the diode section in top view and is provided above the well region, and an upper lifetime control region that is provided in the diode section, at the upper surface side of the semiconductor substrate, and in a region not overlapping with the temperature sensing unit in top view.

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Patent Owner(s)

Patent OwnerAddress
FUJI ELECTRIC CO LTD1-1 TANABESHINDEN KAWASAKI-KU KAWASAKI-SHI KANAGAWA 210-9530

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kubouchi, Motoyoshi Matsumoto, JP 56 55
Yoshida, Soichi Matsumoto, JP 30 28

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