Thermal dissipation structures for FinFETs
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 17, 2008
Grant Date -
Sep 27, 2007
app pub date -
May 31, 2007
filing date -
Jun 21, 2005
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A fin-type field effect transistor has an insulator layer above a substrate and a fin extending above the insulator layer. The fin has a channel region, and source and drain regions. A gate conductor is positioned over the channel region. The insulator layer includes a heat dissipating structural feature adjacent the fin, and a portion of the gate conductor contacts the heat dissipating structural feature. The heat dissipating structural feature can comprise a recess within the insulator layer or a thermal conductor extending through the insulator layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully