Zone melting apparatus for monocrystallizing semiconductor layer on insulator layer
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United States of America Patent
Stats
-
Sep 15, 1987
Grant Date -
N/A
app pub date -
Dec 31, 1985
filing date -
Feb 26, 1985
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A zone melting apparatus, in accordance with the present invention for monocrystallizing a semiconductor layer in a layered substance, includes: an upper elongated heater for zone melting of the semiconductor layer, the upper heater being disposed above and parallel to the semiconductor layer; a plurality of lower elongated heaters for heating the whole layered substance, the lower heaters being disposed in a plane below and parallel to the layered substance and the axis of each of the lower heaters being substantially perpendicular to the axis of the upper heater; a plurality of power suppliers for supplying electric power to the lower heaters; one or more temperature sensors for estimating the temperature of the layered substance; and a controller for controlling the power suppliers in response to the output of the temperature sensor(s), the controller making control so that the temperature of the central portion of the layered substance is slightly lower than that of the outer portions thereof.
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