Semiconductor power device and method for producing same
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United States of America Patent
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Nov 17, 2020
Grant Date -
May 21, 2020
app pub date -
Nov 14, 2019
filing date -
Feb 2, 2011
priority date (Note) -
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Abstract
A method for producing a semiconductor power device includes forming a gate trench from a surface of the semiconductor layer toward an inside thereof. A first insulation film is formed on the inner surface of the gate trench. The method also includes removing a part on a bottom surface of the gate trench in the first insulation film. A second insulation film having a dielectric constant higher than SiO2 is formed in such a way as to cover the bottom surface of the gate trench exposed by removing the first insulation film.
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