Semiconductor device with air gap and method for fabricating the same
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United States of America Patent
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Sep 2, 2014
Grant Date -
Jun 26, 2014
app pub date -
Mar 15, 2013
filing date -
Dec 26, 2012
priority date (Note) -
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Abstract
A method for fabricating a semiconductor device includes forming a semiconductor structure having an open portion over a substrate, forming a sacrificial spacer on sidewalls of the open portion, forming a recessed first plug in the open portion, forming an air gap by removing the sacrificial spacer, forming a capping layer to expose the top surface of the recessed first plug and to cap the air gap, forming a protective layer over the capping layer and the recessed first plug, forming an ohmic contact layer over the protective layer, and forming a second plug over the ohmic contact layer.
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