Integrated circuit device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11251306
APP PUB NO 20210305427A1
SERIAL NO

17028191

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ATTORNEY / AGENT: (SPONSORED)

Importance

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Abstract

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An integrated circuit device includes a fin-type active region extending on a substrate in a first horizontal direction, a gate line extending on the fin-type active region in a second horizontal direction, first and second source/drain regions arranged on the fin-type active region; a first source/drain contact pattern connected to the first source/drain region and including a first segment having a first height in a vertical direction, a second source/drain contact pattern connected to the second source/drain region and including a second segment having a second height less than the first height in the vertical direction, and an insulating capping line extending on the gate line in the second horizontal direction and including an asymmetric capping portion between the first segment and the second segment, the asymmetric capping portion having a variable thickness in the first horizontal direction.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bae, Deokhan Hwaseong-si, KR 25 35
Jang, Kwangyong Seoul, KR 13 21
Park, Juhun Seoul, KR 18 10
Um, Myungyoon Seoul, KR 8 7

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