Semiconductor device with signal line having decreased characteristic impedance
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United States of America Patent
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Jul 3, 2007
Grant Date -
Feb 2, 2006
app pub date -
Sep 23, 2005
filing date -
Aug 9, 2002
priority date (Note) -
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Abstract
A semiconductor device includes a semiconductor chip, electrodes pads, an insulating layer, first and second conductive patterns and external terminals. The electrode pads are formed on a first area of a main surface of the semiconductor chip. The insulating layer is formed on a second area of the semiconductor chip so as to expose the electrode pads. The first conductive pattern provides a ground potential and is formed on the insulating layer. The second conductive pattern transfers a signal. The second conductive pattern is formed on the insulating layer and located to partially surround the first conductive pattern. The external terminals are formed on the first and second patterns at the second area.
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