Composition for forming anti-reflective coating for use in lithography
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United States of America Patent
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Sep 16, 2008
Grant Date -
Sep 28, 2006
app pub date -
Jun 1, 2006
filing date -
Apr 10, 2001
priority date (Note) -
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status (Latency Note)
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Abstract
A composition for forming anti-reflective coating for use in a lithographic process in manufacture of a semiconductor device, comprising as a component a resin containing cyanuric acid or a derivative thereof, or a resin containing a structural unit derived from cyanuric acid or a derivative thereof. The structural unit is preferably represented by formula (1): ##STR00001## and can be contained in a main chain or a side chain, or both main chain and side chain of a resin. The anti-reflective coating for lithography obtained from the composition has a high reflection reducing effect and does not cause intermixing with a resist layer to give an excellent resist pattern. It has a higher selectivity in dry-etching compared with the resists.
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