Process for vapor phase epitaxy of compound semiconductor

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United States of America Patent

PATENT NO 5970314
SERIAL NO

08823237

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Abstract

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A process for forming a high quality epitaxial compound semiconductor layer of indium gallium nitride In.sub.x Ga.sub.1-x N, (where 0

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Patent Owner(s)

  • SUMITOMO ELECTRIC INDUSTRIES, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Koukitu, Akinori Fucyu, JP 38 225
Matsushima, Masato Itami, JP 8 136
Miura, Yoshiki Itami, JP 22 532
Motoki, Kensaku Itami, JP 80 2566
Okahisa, Takuji Itami, JP 62 2446
Seki, Hisashi Hachioji, JP 8 83
Shimazu, Mitsuru Itami, JP 13 127

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