Apparatus for generating magnetic fields during semiconductor processing

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United States of America Patent

PATENT NO 11915915
APP PUB NO 20220384158A1
SERIAL NO

17334636

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Abstract

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A plasma vapor deposition (PVD) chamber used for depositing material includes an apparatus for influencing ion trajectories during deposition in an edge region of a substrate. The apparatus includes a reflector assembly that surrounds a substrate support and is configured to reflect heat to the substrate during reflowing of material deposited on the substrate and a plurality of permanent magnets embedded in the reflector assembly that are configured to influence ion trajectories on the edge region of the substrate during deposition processes, the plurality of permanent magnets are spaced symmetrically around the reflector assembly.

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Patent Owner(s)

  • APPLIED MATERIALS, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bangalore, Umesh Suhas Sunnyvale, US 5 0
Riker, Martin Lee Milpitas, US 46 559

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