Wide dynamic range and high speed voltage mode sensing for a multilevel digital non-volatile memory
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United States of America Patent
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Dec 30, 2008
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app pub date -
Mar 22, 2007
filing date -
Jan 14, 1999
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Abstract
A high speed voltage mode sensing is provided for a digital multibit non-volatile memory integrated system. An embodiment has a local source follower stage followed by a high speed common source stage. Another embodiment has a local source follower stage followed by a high speed source follower stage. Another embodiment has a common source stage followed by a source follower. An auto zeroing scheme is used. A capacitor sensing scheme is used. Multilevel parallel operation is described.
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