Method of manufacturing semiconductor optical device
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United States of America Patent
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Apr 6, 2010
Grant Date -
Mar 29, 2007
app pub date -
Nov 2, 2006
filing date -
Apr 15, 2003
priority date (Note) -
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Abstract
Method for manufacturing a semiconductor optical device includes forming an epitaxial structure containing at least an active layer which can emit light, of a III-V group semiconductor material; forming an insulating layer over the epitaxial structure, which prevents the V group element from escaping from the epitaxial structure during heat treatment; heat treating the epitaxial structure at at least 800 degrees C.; and removing the insulating layer, thereby enhancing the reliability of the device.
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