Multiple gated MOSFET for use in DC-DC converter
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United States of America Patent
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Oct 26, 1999
Issued Date -
N/A
app pub date -
Mar 31, 1997
filing date -
Oct 13, 1995
priority date (Note) -
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Abstract
A power MOSFET includes a pair of electrically isolated gates having different gate widths. The MOSFET is connected in a switching mode DC-DC converter, with the gates being driven by a pulse width modulation (PWM) control to vary the duty cycle of the gate drive signal and thereby regulate the output voltage of the DC-DC converter. In light load conditions, the larger gate is disconnected from the PWM control to reduce the gate capacitance which must be driven by the PWM control. In normal load conditions, the larger gate is connected to the PWM control to reduce the on-resistance of the MOSFET. Both of these operations increase the efficiency of the DC-DC converter.
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