Reversed T-shaped FinFET
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United States of America Patent
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Jul 31, 2007
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N/A
app pub date -
Jan 22, 2004
filing date -
Jan 22, 2004
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Abstract
A fin field effect transistor (FinFET) includes a reversed T-shaped fin. The FinFET further includes source and drain regions formed adjacent the reversed T-shaped fin. The FinFET further includes a dielectric layer formed adjacent surfaces of the fin and a gate formed adjacent the dielectric layer.
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