Sputtering target and producing method thereof

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United States of America Patent

PATENT NO 11591687
APP PUB NO 20200283888A1
SERIAL NO

16741838

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Abstract

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An object of the present invention is to provide a sputtering target that can suppress a generation amount of fine nodules which lead to an increase in substrate particles during sputtering, and a method for producing the same. A ceramic sputtering target, the sputtering target having a surface roughness Ra on a sputtering surface of 0.5 μm or less and an Svk value measured with a laser microscope on the sputtering surface of 1.1 μm or less.

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Patent Owner(s)

  • JX NIPPON MINING & METALS CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gorai, Atsushi Ibaraki, JP 1 0
Mizuguchi, Tomoji Ibaraki, JP 2 0
Nakamura, Haruhi Ibaraki, JP 1 0
Sasaoka, Hidetoshi Ibaraki, JP 6 2

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