Porous gas sensors and method of preparation thereof

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United States of America Patent

PATENT NO 7838949
SERIAL NO

11041358

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Abstract

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A sensor is disclosed. A representative sensor includes a silicon substrate having a porous silicon region. A portion of the porous silicon region has a front contact is disposed thereon. The contact resistance between the porous silicon region and the front contact is between about 10 ohms and 100 ohms.

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Patent Owner(s)

  • GEORGIA TECH RESEARCH CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gole, James L Atlanta, US 23 317
Hesketh, Peter J Atlanta, US 13 358
Seals, Lenward T Atlanta, US 6 73

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