Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice
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United States of America Patent
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Apr 12, 2005
Grant Date -
May 27, 2004
app pub date -
Nov 22, 2002
filing date -
Nov 22, 2002
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Abstract
The group III-V semiconductor device comprises a quantum well layer, barrier layers sandwiching the quantum well layer and a region of a third semiconductor material formed by spatially-selective intermixing of atoms on the group V sublattice between the first semiconductor material of the quantum well layer and the second semiconductor material of the barrier layer. The quantum well layer is a layer of a first semiconductor material that has a band gap energy and a refractive index. The barrier layers are layers of a second semiconductor material that has a higher band gap energy and a lower refractive index than the first semiconductor material. The third semiconductor material has a band gap energy and a refractive index intermediate between the band gap energy and the refractive index, respectively, of the first semiconductor material and the second semiconductor material.
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