Method of patterning field dielectric regions in a semiconductor device
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United States of America Patent
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Mar 6, 2001
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N/A
app pub date -
Sep 13, 1999
filing date -
Sep 13, 1999
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Abstract
High density, multi-metal layer semiconductor devices are formed with accurate and uniform polysilicon gates and underlying gate oxides. Embodiments include etching the photoresist mask to reduce the horizontal layer.
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