Stacked columnar 1T-nMTJ structure and its method of formation and operation
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United States of America Patent
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Apr 4, 2006
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app pub date -
Feb 24, 2004
filing date -
Aug 8, 2002
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Abstract
This invention relates to an array architecture which incorporates certain advantages from both cross-point and 1T-1MTJ architectures during reading operations. The fast read-time and higher signal to noise ratio of the 1T-1MTJ architecture and the higher packing density of the cross-point architecture are both exploited by using a single access transistor to control the reading of multiple stacked columns of cells each column being provided in a respective stacked memory layer.
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