3D-stacked memory with reconfigurable compute logic

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United States of America Patent

PATENT NO 11789610
APP PUB NO 20210311634A1
SERIAL NO

17353393

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Abstract

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A 3D-stacked memory device including: a base die including a plurality of switches to direct data flow and a plurality of arithmetic logic units (ALUs) to compute data; a plurality of memory dies stacked on the base die; and an interface to transfer signals to control the base die.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Mu-Tien San Jose, US 55 368
Gera, Prasun Atlanta, US 3 23
Niu, Dimin Sunnyvale, US 122 479
Zheng, Hongzhong Sunnyvale, US 238 1084

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