Article comprising an organic thin film transistor adapted for biasing to form a N-type or a P-type transistor
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United States of America Patent
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Aug 21, 2001
Issued Date -
N/A
app pub date -
May 15, 1995
filing date -
Dec 9, 1994
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Abstract
Disclosed are organic thin film transistors that can be either n-channel or p-channel transistors, depending on biasing conditions. Such transistors are expected to find wide use in complementary circuits. A specific embodiment of the inventive transistor comprises a 15 nm thick layer of .alpha.-6T with a 40 nm thick layer of C.sub.60 thereon. The latter was protected against degradation by the ambient by means of an appropriate electrically inert layer, specifically by a 40 nm .alpha.-6T layer.
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