In-situ formation of oxidized aluminum nitride films
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United States of America Patent
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Aug 17, 2010
Grant Date -
Nov 8, 2007
app pub date -
May 7, 2007
filing date -
May 8, 2006
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Abstract
A method is provided for in-situ formation of a thin oxidized AlN film on a substrate. The method includes providing the substrate in a process chamber, depositing an AlN film on the substrate, and post-treating the AlN film with exposure to a nitrogen and oxygen-containing gas. The post-treating increases the dielectric constant of the AlN film with substantially no increase in the AlN film thickness. The method can also include pre-treating the substrate prior to AlN deposition, post-annealing the AlN film before or after the post-treatment, or both.
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