Global shutter CMOS image sensor and method for making the same

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United States of America Patent

PATENT NO 11735610
SERIAL NO

16951606

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Abstract

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The disclosure discloses a global shutter CMOS image sensor, which adopts non-uniform storage diffusion region doping to reduce the junction leakage at storage points, so as to ensure that with the increase of the depth of photodiodes and the increase of pixels, all carriers in rows read subsequently can be transferred to storage diffusion regions, the loss of the carriers in the storage diffusion regions is not caused when a global shutter transistor is turned on, and the carriers can be completely transferred from the storage diffusion regions to floating diffusion regions through second transfer transistors even if the number of rows of pixel units increases during reading-out row by row. The disclosure further discloses a method for making the global shutter CMOS image sensor.

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Patent Owner(s)

Patent OwnerAddress
SHANGHAI HUALI MICROELECTRONICS CORPORATIONNO 6 LIANGTENG ROAD PUDONG NEW AREA SHANGHAI 201314

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Haoyu Shanghai, CN 45 32
Gu, Zhen Shanghai, CN 82 82
Shao, Hua Shanghai, CN 77 135
Tian, Zhi Shanghai, CN 27 21

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