Method for fabricating a gate eletrode
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United States of America Patent
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-
Apr 10, 2001
Grant Date -
N/A
app pub date -
Jan 25, 1999
filing date -
Dec 15, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A manufacturing method of a gate electrode is described. A plurality of undoped amorphous silicon layers and a plurality of doped amorphous silicon layers are alternately formed on a substrate.
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