Structure and method for manufacturing strained FINFET
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United States of America Patent
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May 29, 2007
Grant Date -
Aug 17, 2006
app pub date -
Feb 15, 2005
filing date -
Feb 15, 2005
priority date (Note) -
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Abstract
A part of the gate of a FINFET is replaced with a stress material to apply stress to the channel of the FINFET to enhance electron and hole mobility and improve performance. The FINFET has a SiGe/Si stacked gate, and before silicidation the SiGe part of the gate is selectively etched to form a gate gap that makes the gate thin enough to be fully silicidated. After silicidation, the gate-gap is filled with a stress nitride film to create stress in the channel and enhance the performance of the FINFET.
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