Photoelectric transducer and its manufacturing method
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United States of America Patent
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May 29, 2007
Grant Date -
Nov 25, 2004
app pub date -
Jun 13, 2003
filing date -
Jun 14, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A photoelectric transducer comprises an electrode (5) on which a semiconductor layer (7) carrying a sensitizing dye is deposited. The semiconductor layer (7) contains semiconductor particles and a binder and has a porosity of 40 to 80%. A method for manufacturing a photoelectric transducer by applying a solution containing semiconductor particles and a binder to an electrode (5), drying the electrode, and pressing the electrode under a pressure of 20 to 200 Mpa so as to form a semiconductor layer (7) is also disclosed. By the method, a photoelectric transducer comprising a semiconductor layer where a conduction path of photo-excited electrons is ensured without sintering the semiconductor layer at a high temperature and which has an adhesive power adaptable to the flexibility of the base and exhibiting excellent photoelectric transducing characteristics can be provided.
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