Bipolar transistors with depleted emitter
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United States of America Patent
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Sep 14, 2010
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app pub date -
May 17, 2007
filing date -
May 19, 2006
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Abstract
This invention disclosed a novel method of fully depleted emitter so that the built-in potential between emitter and the base becomes lower and the charge storage between the emitter and base becomes small. This concept also applies to the diodes or rectifiers. With depleted junction, this result in very fast switching of the diodes and transistors. Another novel structure utilizes the strip base structure to achieve lower on resistance of the bipolar transistor. The emitter region of the strip base can be a normal emitter or depleted emitter.
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