PMOSFET device with localized nitrogen sidewall implantation
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United States of America Patent
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Apr 20, 2004
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app pub date -
Feb 23, 2000
filing date -
Feb 23, 2000
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Abstract
P-type metal-oxide semiconductor field effect transistor (PMOSFET) devices have a characteristic property known as threshold voltage. This threshold voltage may consist of separate threshold voltages associated with the main portion of the gate region of the device and with the sidewall corner of the device. Under some conditions, the threshold behavior in the sidewall corner region of the device may dominate the performance of the device, not necessarily in the manner intended by the designer of the device. A method of controlling threshold voltage behavior is described. In particular, ion implantation of nitrogen in the gate sidewall region of the device can provide such control. Devices made by this method are also described.
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