Semiconductor process and PMOS varactor

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United States of America Patent

PATENT NO 7682919
APP PUB NO 20040198013A1
SERIAL NO

10829694

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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-doped contact may be formed in the PMOS n-well instead of being separated from there (accumulation mode).

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Patent Owner(s)

  • INFINEON TECHNOLOGIES AG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Johansson, Ted Djursholm, SE 41 298

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