In situ application of etch back for improved deposition into high-aspect-ratio features
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United States of America Patent
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Jul 15, 2008
Grant Date -
Jun 9, 2005
app pub date -
Jan 13, 2005
filing date -
Jan 24, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.
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