Method of manufacturing self-aligned contact openings
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United States of America Patent
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Sep 30, 2008
Grant Date -
Jan 3, 2008
app pub date -
Sep 11, 2007
filing date -
Jun 17, 2005
priority date (Note) -
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status (Latency Note)
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Abstract
A method of manufacturing self-aligned contact openings is provided. A substrate having a number of device structures is provided and the top of the device structures is higher than the surface of the substrate. A first dielectric layer and a conductive layer are sequentially formed on the surfaces of the substrate and the device structures. Next, a part of the conductive layers on the top and the sidewalls of the device structures is removed and a number of first spacers is formed on the exposed sidewalls of the device structures. The exposed conductive layer and the first dielectric layer are removed by using the first spacer as the mask to expose the substrate. Then, a number of conductive spacers is formed. A number of second spacers is formed on the sidewalls of the conductive spacers.
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