Semiconductor device and method for manufacturing the same
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United States of America Patent
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Jan 3, 2006
Issued Date -
N/A
app pub date -
Apr 19, 2002
filing date -
Mar 27, 2001
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A semiconductor device, comprises a first electrode, a semiconductor film, a first insulating film and a second insulating film formed between the semiconductor film and the first electrode, a second electrode, and a third insulating film formed between the semiconductor film and the second electrode. The semiconductor film is formed on a flat surface of the second insulating film. A cross portion where the first electrode and the second electrode cross the semiconductor film at the same position is formed. The first electrode and the second electrode are connected to each other through an opening made in the first insulating film and the second insulating film outside the cross portion.
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