Importance

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Abstract

A semiconductor device includes a bipolar transistor formed on a semiconductor substrate 1, in which a collector region 13 is formed on the semiconductor substrate 1; a first insulating layer 31 having a first opening 51 formed in a collector region 13 is formed on the surface of the semiconductor substrate 1; and a base semiconductor layer 14B is formed in contact with the collector region through the first opening 51. The base semiconductor layer 14B is formed such that the edge thereof extends onto the first insulating layer 31. An emitter semiconductor layer 14E is formed in a predetermined region on the base semiconductor layer; a second insulating layer 32 is formed on the first insulating layer 31 covering the edge of the base semiconductor layer 14E; a second opening 52 which opens the contact portion between the emitter semiconductor layer 14E and the base semiconductor layer 14B and a third opening 53 which opens a base electrode take-out portion of the base semiconductor layer 14B are formed; and a metal silicide layer 15 is formed on the surface of the aforementioned base semiconductor layer inside the third opening 53. A metal silicide layer can be formed in a self-aligned manner in a semiconductor device including a bipolar transistor, and silicide in other semiconductor elements can also be formed being self-aligned.

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First Claim