Plasma processing apparatus

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 6837937
APP PUB NO 20040040507A1
SERIAL NO

10228048

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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It is required for the conventional plasma processing apparatus used for plasma processing in a reduced pressure atmosphere to replace the component parts such as earth member frequently as the expendable supplies because an insulation-processed layer and the substrate itself are thinned due to plasma and impurities contained in these thinned materials diffuse into plasma to result in adverse effect on a sample such as wafer, and thinning of the insulation-processed layer due to plasma and resultant electrical effect of the thinning of the insulation-processed layer cause the change of the state of plasma. The invention solves the problem by using electrically conductive ceramic that is formed of a baked material mainly composed of alumina for component parts of the apparatus in the plasma processing apparatus used for plasma processing of an sample to be processed such as wafer in a reduced pressure atmosphere.

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Patent Owner(s)

  • HITACHI HIGH-TECHNOLOGIES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Furuse, Muneo Kudamatsu, JP 29 823
Kadotani, Masanori Kudamatsu, JP 29 651
Tauchi, Susumu Tokuyama, JP 44 635
Yoshigai, Motohiko Hikari, JP 66 1067

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