Semiconductor device and method of manufacturing the same
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United States of America Patent
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Apr 21, 2009
Grant Date -
Jul 6, 2006
app pub date -
Dec 30, 2005
filing date -
Dec 30, 2004
priority date (Note) -
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Abstract
A method of manufacturing a semiconductor device providing insulation between a plurality of MOS transistors without device isolation regions. The method includes forming a first insulation layer on a substrate, exposing a portion of the substrate by etching the first insulation layer using a resist, growing an epitaxial layer on the exposed portion of the substrate, removing the patterned first insulation layer, and forming transistors on the substrate and epitaxial layer, respectively. The epitaxial layer is grown to a degree that an upper surface of the epitaxial layer is higher than that of the substrate.
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