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Abstract

Disclosed is a method for fabricating a semiconductor device. The method can include forming a first barrier pattern to cover a first region of a semiconductor substrate while exposing second and third regions of the semiconductor substrate, forming a first oxide layer pattern on the second and third regions, forming a second barrier pattern to cover the third region while exposing the first and second regions, forming a second oxide layer pattern on the first and second regions, forming a third oxide layer pattern on the second region by removing the second and first oxide layer patterns formed on the first and third regions, forming a silicide metal layer on the first, second, and third regions, and selectively forming silicide on the first and third regions by performing an annealing process with respect to the silicide metal layer.

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