Read method, write method and memory circuit using the same
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United States of America Patent
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Aug 22, 2023
Grant Date -
Aug 25, 2022
app pub date -
May 13, 2022
filing date -
Oct 30, 2019
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Abstract
A read method and a write method for a memory circuit are provided, wherein the memory circuit includes a memory cell and a selector electrically coupled to the memory cell. The read method includes applying a first voltage to the selector, wherein a first voltage level of the first voltage is larger than a voltage threshold corresponding to the selector; and applying, after the applying of the first voltage, a second voltage to the selector to sense one or more bit values stored in the memory cell, wherein a second voltage level of the second voltage is constant and smaller than the voltage threshold, wherein a first duration of the applying of the first voltage is smaller than a second duration of the applying of the second voltage, wherein the second voltage is applied following the end of the first duration.
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Patent Owner(s)
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Chen, Tzu-Chiang | Hsinchu, TW | 163 | 1003 |
Chiang, Hung-Li | Taipei, TW | 155 | 1126 |
Diaz, Carlos H | Los Altos Hills, US | 263 | 3784 |
Wang, Yih | Hsinchu, TW | 237 | 699 |
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