Read method, write method and memory circuit using the same

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United States of America Patent

PATENT NO 11735259
APP PUB NO 20220270682A1
SERIAL NO

17743480

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Abstract

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A read method and a write method for a memory circuit are provided, wherein the memory circuit includes a memory cell and a selector electrically coupled to the memory cell. The read method includes applying a first voltage to the selector, wherein a first voltage level of the first voltage is larger than a voltage threshold corresponding to the selector; and applying, after the applying of the first voltage, a second voltage to the selector to sense one or more bit values stored in the memory cell, wherein a second voltage level of the second voltage is constant and smaller than the voltage threshold, wherein a first duration of the applying of the first voltage is smaller than a second duration of the applying of the second voltage, wherein the second voltage is applied following the end of the first duration.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Tzu-Chiang Hsinchu, TW 163 1003
Chiang, Hung-Li Taipei, TW 155 1126
Diaz, Carlos H Los Altos Hills, US 263 3784
Wang, Yih Hsinchu, TW 237 699

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