Semiconductor wafer with ultra thin doping level formed by defect engineering
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United States of America Patent
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Nov 2, 2004
Grant Date -
N/A
app pub date -
Sep 9, 2002
filing date -
Sep 21, 2001
priority date (Note) -
Expired
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Abstract
Vacancies and dopant ions are introduced near the surface of a semiconductor wafer. The dopant ions which diffuse by an interstitialcy mechanism have diffusivity greatly reduced, which leads to a very low resistivity doped region and a very shallow junction.
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