Method to improve flash forward tunneling voltage (FTV) performance
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 7, 2006
Grant Date -
Mar 17, 2005
app pub date -
Oct 28, 2004
filing date -
Nov 8, 2002
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A floating gate structure and a method for forming a floating gate oxide layer comprising the following steps. A structure having a first dielectric layer formed thereover is provided. An oxide layer is formed over the first dielectric layer. A nitride layer is formed over the oxide layer. The nitride layer is patterned to form an opening exposing a portion of the oxide layer. A portion of the first dielectric layer is exposed by removing: the exposed portion of the oxide layer; and portions of the oxide layer underneath the patterned nitride layer adjacent to the opening to form respective undercuts. The exposed portion of the first dielectric layer is oxidized to form the floating gate oxide layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully