Selective erase method for flash memory
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United States of America Patent
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Jun 12, 2007
Grant Date -
Jan 26, 2006
app pub date -
Oct 7, 2004
filing date -
Jul 21, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Selective erase method for a flash memory device including a group of memory cells arranged in rows and columns include performing an erase operation on the group of memory cells and verifying the erase operation on the group of memory cells to determine threshold voltages of the memory cells. At least one row of memory cells including memory cells having a threshold voltage lower than a desired erase threshold voltage is identified. A further erase operation is performed on the group of memory cells excluding memory cells of the at least one row of memory cells including memory cells having a threshold voltage lower than a desired erase threshold voltage.
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